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Contract Details
| Title |
4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Singapore |
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|---|---|---|---|---|
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| Country | ||||
| Language | English | |||
| Organization | ||||
| Published Date | 01.04.2024 | |||
| Awarded Date | 07.09.2015 | |||
| Overview | Contract Award's Details : 4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Name Nanyang Technological University Attn: Wirna Tel: 91144294 Email: Wirna@Ntu.Edu.Sg Fax: 67900215 4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Contract awarded for 4 Aluminium Gallium Nitride(AlGaN)/ Gallium Nitride(GaN)/ High Electron Mobility Transistor (HEMT)on Silicon substrate Qty:30.0000 Awarded Value: SGD 121,606.80 Award Date: 08/09/2015 Singapore Contract value : 121,606.00 SGD Contractors : DOWA ELECTRONICS MATERIALS CO.,LTD. See in details 08/09/2015 06/11/2015 9932811 08/09/2015 Name Nanyang Technological University Attn: Wirna Tel: 91144294 Email: Wirna@Ntu.Edu.Sg Fax: 67900215 Address : Singapore Singapore Contract Awards Singapore NTU000ETQ15002393 See in details 06/11/2015 121,606.00 SGD | |||
| NAICS | ||||
| CPVS | ||||
| UNSPSC |
-
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| Regions | ||||
| Sectors | ||||
| Contractor | ||||
| Contract Value |
121,606.00 SGD
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URL | ||
| Share | ||||
Singapore
| Title |
|---|
4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Singapore |
| Country |
| Language |
| English |
| Organization |
| Published Date |
| 01.04.2024 |
| Awarded Date |
| 07.09.2015 |
| Overview |
| Contract Award's Details : 4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Name Nanyang Technological University Attn: Wirna Tel: 91144294 Email: Wirna@Ntu.Edu.Sg Fax: 67900215 4 aluminium gallium nitride(algan)/ gallium nitride(gan)/ high electron mobility transistor (hemt)on silicon substrate Contract awarded for 4 Aluminium Gallium Nitride(AlGaN)/ Gallium Nitride(GaN)/ High Electron Mobility Transistor (HEMT)on Silicon substrate Qty:30.0000 Awarded Value: SGD 121,606.80 Award Date: 08/09/2015 Singapore Contract value : 121,606.00 SGD Contractors : DOWA ELECTRONICS MATERIALS CO.,LTD. See in details 08/09/2015 06/11/2015 9932811 08/09/2015 Name Nanyang Technological University Attn: Wirna Tel: 91144294 Email: Wirna@Ntu.Edu.Sg Fax: 67900215 Address : Singapore Singapore Contract Awards Singapore NTU000ETQ15002393 See in details 06/11/2015 121,606.00 SGD |
| NAICS |
| Furniture Colleges Colleges Colleges |
| CPVS |
| Aluminium, nickel, scandium, titanium and vanadium Aluminium Transistors Gallium Iridium, gallium, indium, thallium and barium Nitrides Dates |
| UNSPSC |
| - |
| Regions |
| APEC Countries Asia |
| Sectors |
| Automobiles and Auto Parts Supply Construction Agriculture-Food and Beverages Energy-Power and Electrical Computer Hardwares and Consumables |
| Contractor |
| Contract Value |
|
121,606.00 SGD
|
| URL |
|
|
| Share |
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