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Title |
Adjusting oxygen distribution in Czochralski silicon crystal growth |
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Detail |
Researchers in Taiwan have discovered that in polysilicon production the crucible angular speed affects the oxygen concentration near the crucible wall, which in turn affects the wafers’ mechanical and electrical properties. They simulated a Czochralski process for an ingot with a diameter of 200 mm diameter and a length of 700 mm.
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Country | ||||
Source | PV-Magazine | |||
Regions | Africa Asia Australia Europe North America Oceania South America | |||
Sectors | Construction Energy-Power and Electrical Computer Hardwares and Consumables Steel | |||
Published Date | 15.04.2024 | |||
Original Url | Original Url | |||
Share |
Title |
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Adjusting oxygen distribution in Czochralski silicon crystal growth
|
Detail |
Researchers in Taiwan have discovered that in polysilicon production the crucible angular speed affects the oxygen concentration near the crucible wall, which in turn affects the wafers’ mechanical and electrical properties. They simulated a Czochralski process for an ingot with a diameter of 200 mm diameter and a length of 700 mm. |
Country |
International
|
Source |
PV-Magazine |
Regions |
Africa Asia Australia Europe North America Oceania South America |
Sectors |
Construction Energy-Power and Electrical Computer Hardwares and Consumables Steel |
Published Date |
15.04.2024 |
Original Url |
Share |
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