Project News Details
Title
Adjusting oxygen distribution in Czochralski silicon crystal growth
Detail
Researchers in Taiwan have discovered that in polysilicon production the crucible angular speed affects the oxygen concentration near the crucible wall, which in turn affects the wafers’ mechanical and electrical properties. They simulated a Czochralski process for an ingot with a diameter of 200 mm diameter and a length of 700 mm.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Construction Energy-Power and Electrical Computer Hardwares and Consumables Steel
Published Date
15.04.2024
Original Url
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