Project News Details
Title:
New attempt to build solar cells based on gallium-arsenide-nitrogen-bismuth
Detail:
A Finnish-German research group has developed a 6 × 6 mm low bandgap GaAsNBi solar cell with an active area of 0.25 cm2. The device has an energy bandgap of 0.86 eV and is reportedly suitable for applications in multi-junction solar cells.
Source:
PV-Magazine
Published Date:
01.11.2023
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