New attempt to build solar cells based on gallium-arsen...

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Title	New attempt to build solar cells based on gallium-arsenide-nitrogen-bismuth
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Detail	A Finnish-German research group has developed a 6 × 6 mm low bandgap GaAsNBi solar cell with an active area of 0.25 cm2. The device has an energy bandgap of 0.86 eV and is reportedly suitable for applications in multi-junction solar cells.
Country	International
Source	PV-Magazine
Regions	Africa Asia Australia Europe North America Oceania South America
Sectors	Building Automobiles and Auto Parts Non-Renewable Energy Solar Photovoltaic PV Energy Infrastructure Construction Energy-Power and Electrical Computer Hardwares and Consumables Petroleum Products Building Material
Published Date	01.11.2023
Original Url	Original Url
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Title
New attempt to build solar cells based on gallium-arsenide-nitrogen-bismuth
Detail
A Finnish-German research group has developed a 6 × 6 mm low bandgap GaAsNBi solar cell with an active area of 0.25 cm2. The device has an energy bandgap of 0.86 eV and is reportedly suitable for applications in multi-junction solar cells.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Building Automobiles and Auto Parts Non-Renewable Energy Solar Photovoltaic PV Energy Infrastructure Construction Energy-Power and Electrical Computer Hardwares and Consumables Petroleum Products Building Material
Published Date
01.11.2023
Original Url
Original Url
Share