Mitsubishi Electric unveils power-switching transistor...

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Title	Mitsubishi Electric unveils power-switching transistor for solar
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Detail	Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial applications that need “middle-ground” power converters between DC1500 V and 3.3 kV.
Country	International
Source	PV-Magazine
Regions	Africa Asia Australia Europe North America Oceania South America
Sectors	Automobiles and Auto Parts Non-Renewable Energy Solar Photovoltaic PV Energy Roads and Highways-Bridge Electricity Construction Energy-Power and Electrical Computer Hardwares and Consumables Petroleum Products
Published Date	29.06.2022
Original Url	Original Url
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Title
Mitsubishi Electric unveils power-switching transistor for solar
Detail
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial applications that need “middle-ground” power converters between DC1500 V and 3.3 kV.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Automobiles and Auto Parts Non-Renewable Energy Solar Photovoltaic PV Energy Roads and Highways-Bridge Electricity Construction Energy-Power and Electrical Computer Hardwares and Consumables Petroleum Products
Published Date
29.06.2022
Original Url
Original Url
Share