Project News Details
Title:
Mitsubishi Electric unveils power-switching transistor for solar
Detail:
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial applications that need “middle-ground” power converters between DC1500 V and 3.3 kV.
Source:
PV-Magazine
Published Date:
29.06.2022
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