Fraunhofer ISE warns of risk from higher than expected...

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Title	Fraunhofer ISE warns of risk from higher than expected UV-induced degradation in TOPCon, PERC, HJT cells
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Detail	The researchers of the German institute explained that UV-induced degradation may cause larger than expected efficiency and voltage losses in all dominant cell technologies, including TOPCon devices. The scientists expect that silicon nitride layers could be used to enhance TOPCon UV stability compared to PECVD layers typically utilized in PERC and heterojunction cells.
Country	International
Source	PV-Magazine
Regions	Africa Asia Australia Europe North America Oceania South America
Sectors	Non-Renewable Energy Defence and Security Construction Energy-Power and Electrical Computer Hardwares and Consumables
Published Date	01.12.2024
Original Url	Original Url
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Title
Fraunhofer ISE warns of risk from higher than expected UV-induced degradation in TOPCon, PERC, HJT cells
Detail
The researchers of the German institute explained that UV-induced degradation may cause larger than expected efficiency and voltage losses in all dominant cell technologies, including TOPCon devices. The scientists expect that silicon nitride layers could be used to enhance TOPCon UV stability compared to PECVD layers typically utilized in PERC and heterojunction cells.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Non-Renewable Energy Defence and Security Construction Energy-Power and Electrical Computer Hardwares and Consumables
Published Date
01.12.2024
Original Url
Original Url
Share