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Title |
Masdar & MIT develop method for high efficiency semiconductor materials |
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Detail |
Researchers from the Abu Dhabi based Masdar Institute and the renowned Massachusetts Institute of Technology have jointly published the development of a fabrication method, which they say could make high efficiency semiconductor materials such as gallium-arsenide, indium phosphide and others more competitive with crystalline silicon.
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Country | ||||
Source | PV-Magazine | |||
Regions | Africa Asia Australia Europe North America Oceania South America | |||
Sectors | Construction Energy-Power and Electrical Computer Hardwares and Consumables | |||
Published Date | 02.05.2017 | |||
Original Url | Original Url | |||
Share |
Title |
---|
Masdar & MIT develop method for high efficiency semiconductor materials
|
Detail |
Researchers from the Abu Dhabi based Masdar Institute and the renowned Massachusetts Institute of Technology have jointly published the development of a fabrication method, which they say could make high efficiency semiconductor materials such as gallium-arsenide, indium phosphide and others more competitive with crystalline silicon. |
Country |
International
|
Source |
PV-Magazine |
Regions |
Africa Asia Australia Europe North America Oceania South America |
Sectors |
Construction Energy-Power and Electrical Computer Hardwares and Consumables |
Published Date |
02.05.2017 |
Original Url |
Share |
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