Project News Details
Title
Masdar & MIT develop method for high efficiency semiconductor materials
Detail
Researchers from the Abu Dhabi based Masdar Institute and the renowned Massachusetts Institute of Technology have jointly published the development of a fabrication method, which they say could make high efficiency semiconductor materials such as gallium-arsenide, indium phosphide and others more competitive with crystalline silicon.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Construction Energy-Power and Electrical Computer Hardwares and Consumables
Published Date
02.05.2017
Original Url
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