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Title |
Photovoltaic micro-inverter based on gallium nitride transistors |
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Detail |
Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA’s electronic branch CEA-Leti.
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Country | ||||
Source | PV-Magazine | |||
Regions | Africa Asia Australia Europe North America Oceania South America | |||
Sectors | Infrastructure Construction Energy-Power and Electrical Computer Hardwares and Consumables | |||
Published Date | 01.08.2022 | |||
Original Url | Original Url | |||
Share |
Title |
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Photovoltaic micro-inverter based on gallium nitride transistors
|
Detail |
Scientists from France’s CEA-Ines developed a 400 W micro-inverter with a power density of 1.1 kW/L and an efficiency of 97%. The device utilizes GaN 600V diodes and power transistors developed by CEA’s electronic branch CEA-Leti. |
Country |
International
|
Source |
PV-Magazine |
Regions |
Africa Asia Australia Europe North America Oceania South America |
Sectors |
Infrastructure Construction Energy-Power and Electrical Computer Hardwares and Consumables |
Published Date |
01.08.2022 |
Original Url |
Share |
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