Project News Details
Title
Researchers develop antimony-doped n-type silicon ingots to enhance solar module mechanical strength
Detail
An international team is proposing to use antimony-doped Czochralski-grown silicon as an alternative to n-type silicon for photovoltaic applications. Their analysis showed that 140 μm as-cut planar antimony-doped wafers exhibit slightly higher mechanical strength compared to common wafers doped with phosphorous.
Country
International
Source
PV-Magazine
Regions
Africa Asia Australia Europe North America Oceania South America
Sectors
Non-Renewable Energy Solar Photovoltaic PV Energy Railways-Rail-Railroad Defence and Security Construction Energy-Power and Electrical Computer Hardwares and Consumables Petroleum Products Marine
Published Date
04.11.2025
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